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  Datasheet File OCR Text:
  3-phase diode module `??` df200ae80/160          . efqui                     ? ?    ? ? 3      %'@"& maximum ratings ?? unless otherwise speci?ed tj125?? ?t\q??smv?tj125? symbol g? item y ratingsy  ? unit o? df200ae80 DF200AE160 v rrm repetitive peak reverse v oltage e??&`o ?y 800 1600 v v rsm non-repetitive peak reverse v oltage e?? ?&`o ?y 960 1700 v symbol g? itemy y conditionsy ye ratingsy  ? unit o? i d output curr entd.c. v z? ?v 3-phase full wave, t c1106? ~
? t
tvs?yt c1106? 200 a i fsm sur ge forwar d curr ent ? q ?v 1cycle, 50/60hz, peak value, non-r epetitive 50/60hz
ym r t 1??? t? ? ?&` 2280/2500 a i 2 t i 2 t ?v ? e
u v alue for one cycle of sur ge curr ent  ???? q ?vt 0b? ? 26000 a 2 s tj operating junction t emperatur e
? ?9 s 40?150 ? t stg storage t emperatur e - 9 s 40?125 ? v iso isolatio n br eakdown v oltager.m.s.
? 1yr.m.s. t erminals to case, a.c. 1minute  z?7-?|a.c.  2500 v m o u n t i n g t o r q u e  ???? s mounting m5  ?m5 recommended v alue
* ? ? 1.5?2.5 15?25 2.728 n ~ m kgf ~ 2 t erminal m5 z?m5 recommended v alue
* ? ? 1.5?2.5 15?25 2.728 mass ? t ypical v alue a j ? 240 g electrical characteristics ?? unless otherwise speci?ed tj125?? ?t\q??smv?tj125? symbol g? item y conditions ye ratingsy f ? unit o? min. t yp. max. i rrm repetitive peak reverse curr ent o ?v tj1150? at v rrm v rrm 1c 20.0 ma v fm forwar d v oltage dr op q ?y?< i f 1200a, inst. measur ement `  1.32 v v to thr eshold v oltage  ? ?y tj125? 1.07 v tj1150? 0.86 rt slope resistance ? ? tj125? 1.2 m
tj1150? 1.7 rth j-c thermal resistance ? ? junction to case
?7-? 0.08 ?/w rth c-f interface thermal resistance
? ? ? ? case to heat sink the rmal conductivitysilicon gr ease 710 -3 |w/cm ~ ? -? 7 ???3?? 3?????w ? ; ?p710 -3 |w/cm ~ ? 0.06 ?/w unit o?mm ul; e76102 m df200ae80/160 afeatur es & advantages? a ? ?? w h i g h c u r r e n t c a p a c i t y a s 2 0 0 a t h r e e p h a s e diode bridge. w 2 0 0 a < g 0 ?  ~

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